由华中科技大学牵头的团队使用氧掺杂,将单层 WSe2 p 型晶体管的接触电阻降低了 94%。一款 16 nm 通道器件达到了 1,635 μA/μm,弹道比为 81%。A HUST-led team used oxygen doping to cut contact resistance 94% in monolayer WSe2 p-type transistors. A 16nm-channel device reached 1,635 μA/μm with an 81% ballistic ratio.